Deglitching circuits for a radiation-hardened static random access memory based programmable architecture

ABSTRACT

A method for providing a deglitching circuit for a radiation tolerant static random access memory (SRAM) comprising: providing a configuration memory having a plurality of configuration bits; coupling read and write circuitry to the configuration memory for configuring the plurality of configuration bits; coupling a radiation hard latch to a programmable element, the radiation hard latch controlling the programmable element; and providing an interface that couples at least one of the plurality of configuration bits to the radiation hard latch when the write circuitry writes to the at least one of the plurality of configuration bits.

CROSS-REFERENCED TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.11/323,417, filed Dec. 30, 2005, which is a continuation of U.S. patentapplication Ser. No. 10/636,346, filed Aug. 6, 2003, now issued as U.S.Pat. No. 6,990,010, all of which are hereby incorporated by reference asif set forth herein.

BACKGROUND

1. Field of the Invention

The present invention relates to a method for designingradiation-hardened programmable device such as Field Programmable GateArrays (FPGA). More specifically, the present invention relates tocircuit designs for a radiation-hardened static random access memory(SRAM) based programmable device.

2. Background

A major concern in building a radiation-hardened SRAM based programmabledevice such as a FPGA or programmable logic device (PLD) for a spaceapplication is the reliability of the configuration memory. Memorydevices used in satellites and in other computer equipment, can beplaced in environments that are highly susceptible to radiation. Asatellite memory cell in a space environment can be exposed to aradiation-induced soft error, commonly called a single event upset(SEU), when a cell is struck by high-energy particles. Electron-holepairs are created by, and along the path of, a single energetic particleas it passes through an integrated circuit. An SEU typically resultsfrom alpha particles (helium nuclei), beta particles or other ionizednuclei impacting a low-capacitance node of a semiconductor circuit.Should the energetic particle generate the critical charge in thecritical volume of the memory cell, the logic state of the memory isupset. This critical charge, by definition, is the minimum amount ofelectrical charge required to change the logic state of the memory cell.It is commonly called Q-Critical (Q_(crit)).

SEU can change the contents of any volatile memory cell. If that bit ofmemory is doing something besides merely storing data, such ascontrolling the logic functionality of an FPGA, or other SRAM-basedprogrammable device the results can be catastrophic. While othertechnologies may be better suited for the most sensitive controlfunctions of a spacecraft, there is a significant advantage to be had bybeing able to change a portion of the spacecraft's functionalityremotely, either during prototyping on the ground or later during themission. Spacecraft designers accept the idea that SEUs will inevitablyoccur. Based on the inevitable, such designers are willing to use SRAMbased FPGAs and other programmable devices in non-critical portions ofthe vehicle provided that the error rate is reasonable, sufficient errortrapping is available and the recovery time is reasonable.

When an ion traverses a node within a memory storage cell, the ion canforce the node from its original state to an opposite state for a periodof time. This change of state is due to the charge that the heavy iondeposits as it passes through the silicon of the metal oxidesemiconductor (MOS) transistor of the memory cell. If this node is heldin the opposite state for a period of time longer than the delay aroundthe feed back loop of the memory cell, the cell can switch states andthe stored data can be lost. The period of time the node is held in theopposite state can depend on several factors, the most critical beingthe charge deposited.

FIG. 1 a is a simplified schematic diagram of a logic gate 104. Logicgate 104 comprises a p-channel transistor 102 and an n-channeltransistor 100. P-channel transistor 102 has a source coupled to Vcc, adrain coupled to node Q 105, a gate coupled to node QB 106 and asubstrate connected to Vcc. N-channel transistor 100 has a source 165coupled to ground, a drain 160 coupled to Q node 105, a gate 162 coupledto QB node 106 and a substrate connection 190 also coupled to ground.

FIG. 1 b is an illustration of a charged particle strike on across-section diagram of transistor 100. Transistor 100 comprises adrain 160, a source 165 and a gate 162. Gate oxide 163 separates gate162 from drain 160, source 161 and substrate 190. As shown in FIG. 1 b,the drain 160 is being struck by the charged particle (ion) 110 alongthe strike path 180. When the charged particle 110 passes though asemiconductor transistor 100 (potentially at relative velocities of10,000 miles per hour or more), it ionizes atoms in the silicon leavinga wake of hole and electron pairs 120 behind. If it strikes the outputdiffusion of a complementary metal oxide semiconductor (CMOS) logic gate104, as illustrated in FIG. 1 a, all of those charge carriers areavailable as drift current 130 along strike path 180 if an electricfield is present. If no electric field is present then the drift current130 ultimately diffuses. If the output of the CMOS gate is not at thevoltage of the surrounding material of the diffusion that is struck (forexample, if N+ diffusion 160 is at Vcc and P-substrate 190 is atground), then such an electric field exists and the current will pulldiffusion 160 towards the voltage of the P-substrate 190 or ground.

In such an occurrence, there are two sources of current vying forcontrol of the node Q: the CMOS p-channel device 102 (shown in FIG. 1 a)that originally drove the node to the correct logic level and the poolof charge in the so-called “field funnel” 150 supplying drift current130 in FIG. 1 b. The larger current controls the node. If the strengthof p-channel device 102 is large relative to the available drift current130, then the node will barely move. If the strength of p-channel device102 is small relative to the energy strike, then the drift current 130in FIG. 1 b controls and the node will move rapidly towards ground. Whendrift current 130 controls, it does so until all its charge dissipates,at which time the CMOS p-channel device 102 can restore the node to thecorrect value.

Unfortunately, it takes time for a small CMOS device to regain controlagainst a high-energy strike. In the case, for example, of a victimizedgate being part of the feedback path in a sequential (i.e. memory)element with the incorrect logic level propagating around the loop, theCMOS device gets shut off and is never able to make the neededcorrection and the memory element loses state. If the memory elementcontrols something important, system or subsystem failure can result.

FIG. 2 a is a simplified schematic diagram illustrating a particlestrike on cross-coupled transistors. Transistors 102 a, 102 b, 100 a and100 b form two logic gates like the logic gate 104 in FIG. 1 a. In FIG.2 a, particle strike 210 is shown hitting the N+ region of n-channeltransistor 100 a. FIG. 2 b illustrates the waveforms associated withthis strike.

FIG. 2 b is a diagram depicting the voltage waveforms 200 associatedwith a particle strike 210. The particular case shown is for a particlenot quite capable of producing the critical charge required to flip thelatch. At time T1, the particle hits and then node Q drops from itsequilibrium value of Vcc very quickly due to the drift current in thefield funnel 150 and QB rises due to the drop of Q. Meanwhile,transistor 102 pumps current into node Q slowing its fall. At T2, whenall the charge in the field funnel 150 in FIG. 1 b is exhausted, node Qquickly returns to its original equilibrium value of Vcc. Since the casedepicted is close to the maximum amount of charge that the cell canwithstand, the voltage on node Q approaches the trip point 230 atV_(trip). If the charged particle had created substantially more chargecarriers than the transistor could have overcome, then node Q would havedropped to ground potential and QB would have risen to Vcc potential,and the latch would have flipped into the opposite state permanently.

SRAM in an FPGA may also be specified as CSRAM or USRAM. CSRAM isConfiguration SRAM. This CSRAM is used to hold the configuration bitsfor the FPGA. It is physically spread out over the entire die and isinterspersed with the rest of the FPGA circuitry. At least one of thetwo nodes in the static latch that make up the SRAM cell can beconnected to the FPGA circuitry that controls it. When the contents ofthe CSRAM change, the logic function implemented by the FPGA changes.What is needed is a solution to insure the data integrity is maintained.

USRAM is the abbreviation for user SRAM. This is memory that is part ofa user logic design and is concentrated inside a functional blockdedicated to the purpose. What is needed is a solution to insure thedata integrity of an USRAM is maintained.

In an SRAM based FPGA, there are a variety of separate elements that gointo the making of a useful product. There are configuration memory bitsin the CSRAM, which allow the user to impose his/her design on theuncommitted resources available. There are the combinational andsequential modules that do the user's logic. There are the configurableswitches, signal lines, and buffers that allow the modules to beconnected together. There are support circuits like clocks and otherglobal signals like enables and resets, which allow the building of oneor more subsystems in different time domains. There are blocks like theSRAM and DLL that allow the user access to more highly integratedfunctions than can be built out of an array of logic modules andinterconnect.

Making each element radiation hardened is not practical due to areaconsideration since radiation hardened circuits tend to be rather largecompared to non-radiation hardened circuits. What is needed is aprioritization of essential circuits to be hardened. Also, what isneeded is a reliable radiation hardened FPGA that has a reasonable areathat can be produced at a reasonable cost.

Moreover, what is needed is a way of providing a radiation-hardened SRAMbased FPGA, which can easily be implemented using conventional CMOSprocesses, and which has performance and speed comparable to an SRAMbased FPGA that has not been radiation-hardened.

SUMMARY OF THE INVENTION

The present invention comprises a device and a method for a deglitchingcircuit for a radiation tolerant static random access memory (SRAM)based programmable device such as a field programmable gate array. Adeglitching circuit for a radiation tolerant static random access memory(SRAM) based field programmable gate array comprises a configurationmemory that has a plurality of configuration bits. The configurationbits contain programming information. Read and write circuitry isprovided to configure the plurality of configuration bits. A radiationhard latch is coupled to and controls at least one programmable elementand an interface couples at least one of the plurality of configurationbits to the radiation hard latch and transmits the programminginformation in the configuration bits to the radiation hard latch whenthe read/write circuitry writes and/or reads to the plurality ofconfiguration bits.

A better understanding of the features and advantages of the presentinvention will be obtained by reference to the following detaileddescription of the invention and accompanying drawings which set forthan illustrative embodiment in which the principles of the invention areutilized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 a is a simplified schematic diagram of a logic gate.

FIG. 1 b is an illustration of a charged particle strike though asemiconductor creating a wake of hole and electron pairs.

FIG. 2 a is a simplified schematic diagram illustrating a particlestrike on cross-coupled logic gates.

FIG. 2 b is the waveform associated with a particle not quite capable ofproducing the critical charge required to flip a latch.

FIG. 3 is a simplified schematic diagram of a memory cell deglitchingcircuit.

FIG. 4 is a simplified schematic diagram of a second embodiment of amemory cell deglitching circuit.

FIG. 5 is a simplified schematic diagram of a third embodiment of amemory cell deglitching circuit.

FIG. 6 is a simplified schematic diagram of a fourth embodiment of amemory cell deglitching circuit.

DETAILED DESCRIPTION OF THE INVENTION

The preferred embodiment of the invention is discussed in detail below.While specific implementations are discussed, it should be understoodthat this is done for illustration purposes only. A person skilled inthe relevant art will recognize that other components and configurationsmay be used without parting from the spirit and scope of the invention.

The disclosed invention relates to a method for designing aradiation-hardened FPGA and the required circuit designs for conversionfrom a commercial Static Random Access Memory (SRAM) based FieldProgrammable Gate Array (FPGA) to a radiation-hardened version. Theradiation-hardened FPGA described herein greatly reduces the (SingleEvent Upset) SEU issues associated with prior-art devices. Morespecifically, an FPGA is programmed using configuration bits that can beglitched by charged particles. A circuit like a radiation-hard hardlatch that cannot be glitched directly controls the control nodes thatmust be glitch free. An interface between the source of the control bitsand the control nodes allows the control bit to indirectly control thecontrol nodes but with the freedom to remain in the wrong stateindefinitely due to a particle strike.

FIG. 3 is a simplified schematic diagram of an embodiment of a memorycell deglitching circuit 300. Memory cell deglitch circuit 300 consistsof a radiation-hard (RH) latch 310 and a memory cell 330. First latch310 is formed from inverters 312 and 314 having a non-inverted output Cand an inverted output CB. The RH latch containing C and CB provides formaximum glitch protection, since the transistors are large enough toabsorb Qcrit from a particle strike without significant perturbation ofthe voltages on C and CB.

A memory cell 330 has a non-inverted output Q connected to latch 310through control gate 354 of NAND stack 350. NAND stack 350 has a secondcontrol gate 352 coupled to wordline 372. Memory cell 330 has aninverted output QB connected to latch 310 through control gate 356 ofNAND stack 340. NAND stack 340 has a second control gate 358 coupled towordline 372. Memory cell deglitch circuit 300 has wordline input WL 372coupled to the control gates of pass transistors 332 and 334 in memorycell 330. Memory cell 330 may be of a type that is well known to thoseof ordinary skill in the art and may comprise, for example, twoinverters 336 and 338 each having an input coupled to the output of theother inverter either directly as shown in the figure or throughhigh-resistance polysilicon resistors, e.g., about at least severalhundred kilo-ohms (not shown) as is known in the art. When the wordline372 is high, data can be written into memory cell 330 which forces thestate of Q and QB into C and CB.

Inverters 312 and 314 of latch 310 are large enough to absorb Q criticalfrom an ion charged particle strike. As one of ordinary skill in the arthaving the benefit of this disclosure will appreciate, the size of thetransistors in inverters 312 and 314 will vary. The size of transistorsin inverters 312 and 314 are functions of the process used and aredesigned to be large enough to absorb a Q_(crit) particle strike withouta significant change in voltage. Memory cell 330 outputs Q and QB are asvulnerable as any CSRAM bit. However, because the transistors insidelatch 310 are big enough to absorb the highest energy particle strikebeing designed for, then memory cell 330 can go unresolved oruncorrected indefinitely and the rest of the circuit will never beaffected.

First latch 310 is formed from MOS transistors of a size larger thanthat of the minimum-sized transistor for the process technologyemployed, wherein the P-channel drive strength is approximately doublethe N-channel drive strength and is of a sufficient size to absorb anionizing radiation particle. In a 0.25 micron CMOS process, theP-channel width-to-length (W/L) ratio is about approximately 30/0.24micrometer and the N-channel W/L ratio is approximately 15/0.24micrometer. For an illustrative 0.25 μm process in question, theminimum-sized transistors are about 0.64/0.24 and 0.30/0.24 μmrespectively. That means that the 30.00/0.24 μm P-channel transistor isabout 47× the size of the minimum transistor and the 15.00/0.24 μmN-channel transistor is about 23× the size of the minimum transistor,assuming a standard layout is used.

FIG. 4 is a simplified schematic diagram of another embodiment of amemory cell deglitching circuit. Memory cell deglitch circuit 400consists of RH latch 410, latch 420, and a memory cell 430 connectedtogether. RT latch 410 is formed from inverters 412 and 414 having anon-inverted output C and an inverted output CB. The RT latch containingC and CB provides for maximum glitch protection. A second latch 420 isformed from cross-coupled inverters 416 and 418. Inverter 416 of secondlatch 420 has an inverted output AB coupled to gate 458 of NAND stack440 of first latch 410. Inverter 418 of second latch 420 has an output Acoupled to control gate 452 of NAND stack 450 of first latch 410. Amemory cell 430 has a non-inverted output Q connected to RT latch 410through NAND stack 450 and connected to latch 420 through NAND stack470. Memory cell 430 has an inverted output QB connected to RT latch 410through NAND stack 440 and latch 420 through NAND stack 460. Memory celldeglitch circuit 400 has wordline input 472 coupled to memory cell 430,latch 420 through NAND stack 470 and latch 420 through NAND stack 460.When the wordline 472 is high, data can be written into memory cell 430and which Q and QB force the same states into A and AB as well. Q and QBand A and AB then force the same logic state into C/CB.

In the configuration of the memory cell deglitch circuit 400, memorycell 430 and latch 420 must be a minimum of the double strike distanceapart. First latch 410 outputs C and CB are resistant to an ion chargedparticle strike. The first latch 410 transistors 412 and 414 are largeenough to absorb Q critical from an ion charged particle strike. Latch420 outputs A and AB and the memory cell 430 outputs Q and QBindividually are as vulnerable as any CSRAM bit. However, because theyare more than the minimum double strike distance apart, no singleparticle strike can disturb both. If they are in opposite states (thatis second latch 420 and memory cell 430 have opposite output states),the two NAND stacks 440 and 450 present high impedance to C and CBleaving it isolated. The minimum strike distance (MSD) is a function ofthe physical properties of the device such that a single particle with ashallow angle of approach cannot affect two circuits spaced apart morethan the MSD. Thus, the state at C and CB will be held in placeindefinitely until a write operation. Note, if the transistors notinside memory cell 430 are big enough to absorb the highest energyparticle strike being designed for, then memory cell 430 can gounresolved or uncorrected indefinitely and the rest of the circuit willnever be affected. If A and AB flip, the correct data will be writtenback the next time memory cell 430 is accessed (read or write). The oddsagainst a second particle flipping Q and QB or A and AB while waitingfor a refresh are extremely low.

RH latch 410 is formed from MOS transistors of a larger size wherein theP-channel drive strength is double the N-channel drive strength and isof a sufficient size to absorb the charge generated by an ionizingradiation particle. In a 0.25 n CMOS process, the P-channel W/L ratio isabout approximately 30/0.24 micrometer and the N-channel W/L ratio isabout approximately 15/0.24 micrometer. The above sizes are anillustrative example only and are in no way meant to limit the presentdisclosure.

FIG. 5 is a simplified schematic diagram of yet another embodiment of amemory cell deglitching circuit 500. Memory cell deglitch circuit 500consists of RH latch 510 and memory cell 530. First latch 510 is formedfrom inverters 512 and 514 having a non-inverted output C and aninverted output CB. The full-latch containing C and CB provides formaximum glitch protection.

A memory cell 530 has a non-inverted output Q connected to RH latch 510through control gate 554 of NAND stack 550. NAND stack 550 has a secondcontrol gate 552 coupled to wordline 572 and the column write signalthrough AND gate 560. Memory cell 530 has an inverted output QBconnected to RH latch 510 through control gate 556 of NAND stack 540.NAND stack 540 has a second control gate 558 coupled to wordline 572 andthe column write signal through AND gate 560. Memory cell deglitchcircuit 500 has wordline input WL 572 coupled to the control gates ofpass transistors 532 and 534 in memory cell 530. Memory cell 530 is wellknown to those of ordinary skill in the art and comprises two inverters536 and 538 each having an input coupled to the output of the otherinverter. When the wordline 572 is high, data can be written into orread from memory cell 530.

In the present embodiment, a column write signal 562 is added to memorydeglitch circuit 500. As stated above, NAND stack 550 has a secondcontrol gate 552 coupled to wordline 572 and global write signal throughAND gate 560 and NAND stack 540 has a second control gate 558 coupled towordline 572 and global write signal through AND gate 560. Coupling RTlatch 510 through AND gate 560 isolates latch 510 and outputs C and CBfrom outputs Q and QB during read operations without affecting the stateof C and CB.

The RT latch 510 inverters 512 and 514, as set forth above in relationto FIGS. 3 and 4, have transistors large enough to absorb Q criticalfrom an ion charged particle strike. Memory cell 530 outputs Q and QBare as vulnerable as any CSRAM bit. However, since C/CB are isolatedfrom Q/QB an SEU of Q/QB will not upset C/CB.

FIG. 6 is a simplified schematic diagram of still yet another embodimentof a memory cell deglitching circuit 600. Memory cell deglitchingcircuit 600 is substantially similar to memory cell deglitching circuit500 as set forth in FIG. 5 except that in the present embodiment, a rowwrite line 662 is added to memory deglitch circuit 600 instead of thecolumn write signal as in memory cell deglitching circuit 500. As statedabove, NAND stack 650 has a second control gate 652 coupled to row writesignal line 662 and NAND stack 640 has a second control gate 658 coupledto row write signal line 662. Coupling latch 610 to global row writesignal line isolates latch 510 and outputs C and CB from outputs Q andQB without affecting the state of C and CB, except during writeoperations.

While the present disclosure is made in the context of an FPGA device,persons of ordinary skill in the art will appreciate that the presentinvention is applicable to other SRAM-based programmable devices. Whileembodiments and applications of this invention have been shown anddescribed, it would be apparent to those skilled in the art that manymore modifications than mentioned before are possible without departingfrom the inventive concepts herein. The invention, therefore, is not tobe restricted except in the spirit of the appended claims.

1. A radiation tolerant static random access memory (SRAM) cell anddeglitching circuit, including: a configuration memory cell storing aconfiguration bit and comprising a first inverter having an input and anoutput and a second inverter having an input and an output, the outputof the first inverter forming an output of the memory cell and coupledto the input of the second inverter, the output of the second inverterforming a complementary output of the memory cell and coupled to theinput of the first inverter; a radiation hardened latch having an outputand a complementary output; a first AND gate having a first inputcoupled to the output of the configuration memory cell, a second inputcoupled to a write-control line, and an output coupled to thecomplementary output of the latch; a second AND gate having a firstinput coupled to the complementary output of the configuration memorycell, a second input coupled to the write-control line, and an outputcoupled to the output of the radiation hardened latch; a write data linecoupled to the output of the configuration memory cell through a firstwrite transistor having a gate coupled to the write control line; and awrite complementary data line coupled to the complementary output of theconfiguration memory cell through a second write transistor having agate coupled to the write control line.
 2. The radiation tolerant staticrandom access memory (SRAM) cell and deglitching circuit of claim 1,wherein said radiation hard latch comprises a first radiation hardinverter having an input and an output and a second radiation hardinverter having an input and an output, the output of the firstradiation hard inverter forming the output of the radiation hard latchand connected to the input of the second radiation hard inverter, theoutput of the second radiation hard inverter forming the complementaryoutput of the radiation hard latch and connected to the input of thefirst radiation hard inverter.
 3. The radiation tolerant static randomaccess memory (SRAM) cell and deglitching circuit of claim 2, whereinsaid first and second radiation hardened inverters each comprises aP-channel MOS transistor and an N-channel MOS transistor.
 4. Theradiation tolerant static random access memory (SRAM) cell anddeglitching circuit of claim 3, wherein the P-channel MOS transistor hasa drive strength of about double the drive strength of the N-channel MOStransistor.
 5. The radiation tolerant static random access memory (SRAM)cell and deglitching circuit of claim 3, wherein the P-channel MOStransistor has a width-to-length (W/L) ratio of about 30/0.24micrometers.
 6. The radiation tolerant static random access memory(SRAM) cell and deglitching circuit of claim 3, wherein the N-channelMOS transistor has a width-to-length (W/L) ratio of about 15/0.24micrometers.
 7. The radiation tolerant static random access memory(SRAM) cell and deglitching circuit of claim 1 wherein the radiationhardened latch is disposed at least a double strike distance from theconfiguration memory cell.
 8. The radiation tolerant static randomaccess memory (SRAM) cell and deglitching circuit of claim 1 wherein thefirst and second AND gates each include a first MOS transistor in serieswith a second MOS transistor, the first input comprising a gate of thefirst MOS transistor, the second input comprising the gate of the secondMOS transistor, and the output comprising the drain of the first MOStransistor.
 9. A radiation tolerant static random access memory (SRAM)cell and deglitching circuit, including: a configuration memory cellstoring a configuration bit and comprising a first inverter having aninput and an output and a second inverter having an input and an output,the output of the first inverter forming an output of the memory celland coupled to the input of the second inverter, the output of thesecond inverter forming a complementary output of the memory cell andcoupled to the input of the first inverter; a radiation hardened latchhaving an output and a complementary output; a latch having an outputand a complementary output; a first AND gate having a first inputcoupled to the complementary output of the configuration memory cell, asecond input coupled to the complementary output of the latch, and anoutput coupled to the output of the radiation hardened latch; a secondAND gate having a first input coupled to the output of the configurationmemory cell, a second input coupled to the output of the latch, and anoutput coupled to the complementary output of the radiation hardenedlatch; a third AND gate having a first input coupled to the output ofthe configuration memory cell, a second input coupled to a write-controlline, and an output coupled to the complementary output of the latch; afourth AND gate having a first input coupled to the complementary outputof the configuration memory cell, a second input coupled to thewrite-control line, and an output coupled to the output of the latch; awrite data line coupled to the output of the configuration memory cellthrough a first write transistor having a gate coupled to the writecontrol line; and a write complementary data line coupled to thecomplementary output of the configuration memory cell through a secondwrite transistor having a gate coupled to the write control line. 10.The radiation tolerant static random access memory (SRAM) cell anddeglitching circuit of claim 9, wherein said radiation hard latchcomprises a first radiation hard inverter having an input and an outputand a second radiation hard inverter having an input and an output, theoutput of the first radiation hard inverter forming the output of theradiation hard latch and connected to the input of the second radiationhard inverter, the output of the second radiation hard inverter formingthe complementary output of the radiation hard latch and connected tothe input of the first radiation hard inverter.
 11. The radiationtolerant static random access memory (SRAM) cell and deglitching circuitof claim 9, wherein said latch comprises a first latch inverter havingan input and an output and a second latch inverter having an input andan output, the output of the first latch inverter forming the output ofthe latch and connected to the input of the second latch inverter, theoutput of the second latch inverter forming the complementary output ofthe latch and connected to the input of the first latch inverter. 12.The radiation tolerant static random access memory (SRAM) cell anddeglitching circuit of claim 10, wherein said first and second radiationhardened inverters each comprises a P-channel MOS transistor and anN-channel MOS transistor.
 13. The radiation tolerant static randomaccess memory (SRAM) cell and deglitching circuit of claim 10 whereinthe P-channel MOS transistor has a drive strength of about double thedrive strength of the N-channel MOS transistor.
 14. The radiationtolerant static random access memory (SRAM) cell and deglitching circuitof claim 10, wherein the P-channel MOS transistor has a width-to-length(W/L) ratio of about 30/0.24 micrometers.
 15. The radiation tolerantstatic random access memory (SRAM) cell and deglitching circuit of claim10, wherein the N-channel MOS transistor has a width-to-length (W/L)ratio of about 15/0.24 micrometers.
 16. The radiation tolerant staticrandom access memory (SRAM) cell and deglitching circuit of claim 9wherein the radiation hardened latch is disposed at least a doublestrike distance from the configuration memory cell.
 17. The radiationtolerant static random access memory (SRAM) cell and deglitching circuitof claim 9 wherein the first through fourth AND gates each include afirst MOS transistor in series with a second MOS transistor, the firstinput comprising a gate of the first MOS transistor, the second inputcomprising the gate of the second MOS transistor, and the outputcomprising the drain of the first MOS transistor.
 18. A radiationtolerant static random access memory (SRAM) cell and deglitchingcircuit, including: a configuration memory cell storing a configurationbit and comprising a first inverter having an input and an output and asecond inverter having an input and an output, the output of the firstinverter forming an output of the memory cell and coupled to the inputof the second inverter, the output of the second inverter forming acomplementary output of the memory cell and coupled to the input of thefirst inverter; a radiation hardened latch having an output and acomplementary output; a column write-signal line; a write-control line;A first AND gate having a first input coupled to the column write-signalline, a second input coupled to the write-control line, and an output; asecond AND gate having a first input coupled to the output of theconfiguration memory cell, a second input coupled to the output of thefirst AND gate, and an output coupled to the output of the radiationhardened latch; a third AND gate having a first input coupled to thecomplementary output of the configuration memory cell, a second inputcoupled to the output of the first AND gate, and an output coupled tothe output of the radiation hardened latch; a write data line coupled tothe output of the configuration memory cell through a first writetransistor having a gate coupled to the write control line; and a writecomplementary data line coupled to the complementary output of theconfiguration memory cell through a second write transistor having agate coupled to the write control line.
 19. The radiation tolerantstatic random access memory (SRAM) cell and deglitching circuit of claim18, wherein said radiation hard latch comprises a first radiation hardinverter having an input and an output and a second radiation hardinverter having an input and an output, the output of the firstradiation hard inverter forming the output of the radiation hard latchand connected to the input of the second radiation hard inverter, theoutput of the second radiation hard inverter forming the complementaryoutput of the radiation hard latch and connected to the input of thefirst radiation hard inverter.
 20. The radiation tolerant static randomaccess memory (SRAM) cell and deglitching circuit of claim 19, whereinsaid first and second radiation hardened inverters each comprises aP-channel MOS transistor and an N-channel MOS transistor.
 21. Theradiation tolerant static random access memory (SRAM) cell anddeglitching circuit of claim 19 wherein the P-channel MOS transistor hasa drive strength of about double the drive strength of the N-channel MOStransistor.
 22. The radiation tolerant static random access memory(SRAM) cell and deglitching circuit of claim 19, wherein the P-channelMOS transistor has a width-to-length (W/L) ratio of about 30/0.24micrometers.
 23. The radiation tolerant static random access memory(SRAM) cell and deglitching circuit of claim 19, wherein the N-channelMOS transistor has a width-to-length (W/L) ratio of about 15/0.24micrometers.
 24. The radiation tolerant static random access memory(SRAM) cell and deglitching circuit of claim 18 wherein the radiationhardened latch is disposed at least a double strike distance from theconfiguration memory cell.
 25. The radiation tolerant static randomaccess memory (SRAM) cell and deglitching circuit of claim 18 whereinthe first through fourth AND gates each include a first MOS transistorin series with a second MOS transistor, the first input comprising agate of the first MOS transistor, the second input comprising the gateof the second MOS transistor, and the output comprising the drain of thefirst MOS transistor.